TMT3N30G MOSFET Transistor

The TMT3N30G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMT3N30G transistor as follows.

TMT3N30G Transistor Specification

Transistor Code		TMT3N30G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.15Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		4.4nC

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