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TMT2N40G MOSFET Transistor

The TMT2N40G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMT2N40G transistor as follows.

Circuit diagram symbol of the TMT2N40G transistor

TMT2N40G Transistor Specification

Transistor Code TMT2N40G
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-223
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 3.4Ohm
Power Dissipation (Maximum) PD 2W
Drain-Source Capacitance 32pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 26nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 4.9nC

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