TMPF10N60A MOSFET Transistor

The TMPF10N60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMPF10N60A transistor as follows.

TMPF10N60A Transistor Specification

Transistor Code		TMPF10N60A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	52W
Drain-Source Capacitance		165pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		47nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		35nC

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