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TMPF10N60A MOSFET Transistor

The TMPF10N60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMPF10N60A transistor as follows.

Circuit diagram symbol of the TMPF10N60A transistor

TMPF10N60A Transistor Specification

Transistor Code TMPF10N60A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 10A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.7Ohm
Power Dissipation (Maximum) PD 52W
Drain-Source Capacitance 165pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 47nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 35nC

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