TMP9N50 MOSFET Transistor

The TMP9N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMP9N50 transistor as follows.

TMP9N50 Transistor Specification

Transistor Code		TMP9N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	143W
Drain-Source Capacitance		111pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		43nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		21nC

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