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TMP4N60AZ MOSFET Transistor

The TMP4N60AZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMP4N60AZ transistor as follows.

Circuit diagram symbol of the TMP4N60AZ transistor

TMP4N60AZ Transistor Specification

Transistor Code TMP4N60AZ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.5Ohm
Power Dissipation (Maximum) PD 86.2W
Drain-Source Capacitance 61pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 27nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 12nC

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