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TMP10N80 MOSFET Transistor

The TMP10N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMP10N80 transistor as follows.

Circuit diagram symbol of the TMP10N80 transistor

TMP10N80 Transistor Specification

Transistor Code TMP10N80
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.05Ohm
Power Dissipation (Maximum) PD 290W
Drain-Source Capacitance 214pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 62nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 53nC

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