TMP10N65A MOSFET Transistor

The TMP10N65A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMP10N65A transistor as follows.

TMP10N65A Transistor Specification

Transistor Code		TMP10N65A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.82Ohm
Power Dissipation (Maximum)	PD	198W
Drain-Source Capacitance		156pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		44nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		36nC

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