TMD8N50Z MOSFET Transistor

The TMD8N50Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD8N50Z transistor as follows.

TMD8N50Z Transistor Specification

Transistor Code		TMD8N50Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		132pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		21nC

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