TMD830Z MOSFET Transistor

The TMD830Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD830Z transistor as follows.

TMD830Z Transistor Specification

Transistor Code		TMD830Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	98.4W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		17nC

UXPython is not the creator or an official representative of the TMD830Z MOSFET transistor. You can download the official TMD830Z MOSFET transistor datasheet to get more infromation about this transistor.

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