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TMD5N60Z MOSFET Transistor

The TMD5N60Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD5N60Z transistor as follows.

Circuit diagram symbol of the TMD5N60Z transistor

TMD5N60Z Transistor Specification

Transistor Code TMD5N60Z
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.1Ohm
Power Dissipation (Maximum) PD 98.4W
Drain-Source Capacitance 69pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 27nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 18nC

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