TMD5N50G MOSFET Transistor

The TMD5N50G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD5N50G transistor as follows.

TMD5N50G Transistor Specification

Transistor Code		TMD5N50G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.65Ohm
Power Dissipation (Maximum)	PD	92.5W
Drain-Source Capacitance		61pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		11nC

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