TMD4N65AZ MOSFET Transistor

The TMD4N65AZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD4N65AZ transistor as follows.

TMD4N65AZ Transistor Specification

Transistor Code		TMD4N65AZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.4Ohm
Power Dissipation (Maximum)	PD	98.4W
Drain-Source Capacitance		67pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		15nC

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