TMD4N60 MOSFET Transistor

The TMD4N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD4N60 transistor as follows.

TMD4N60 Transistor Specification

Transistor Code		TMD4N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.55Ohm
Power Dissipation (Maximum)	PD	92.5W
Drain-Source Capacitance		53pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		12nC

UXPython is not the creator or an official representative of the TMD4N60 MOSFET transistor. You can download the official TMD4N60 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

STD16NF06L MOSFET Transistor H7N0603DS MOSFET Transistor TMD3N50AZ MOSFET Transistor H7N1005DL MOSFET Transistor STD6NM60N MOSFET Transistor STD8NM60ND MOSFET Transistor STD60NF06 MOSFET Transistor STD110N8F6 MOSFET Transistor IRFR15N20D MOSFET Transistor IRFR3707ZC MOSFET Transistor BUK6217-55C MOSFET Transistor NTD5802N MOSFET Transistor TK7S10N1Z MOSFET Transistor BUK7222-55A MOSFET Transistor STD30PF03LT4 MOSFET Transistor H7N1004DS MOSFET Transistor PHD108NQ03LT MOSFET Transistor SSF11NS65UD MOSFET Transistor FTK10N10 MOSFET Transistor STD10NM60N MOSFET Transistor