TMD3N40ZG MOSFET Transistor

The TMD3N40ZG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD3N40ZG transistor as follows.

TMD3N40ZG Transistor Specification

Transistor Code		TMD3N40ZG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.4Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		32pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		3.7nC

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