TMD2N60AZ MOSFET Transistor

The TMD2N60AZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD2N60AZ transistor as follows.

TMD2N60AZ Transistor Specification

Transistor Code		TMD2N60AZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4Ohm
Power Dissipation (Maximum)	PD	52.1W
Drain-Source Capacitance		41pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		9nC

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