TMD16N25Z MOSFET Transistor

The TMD16N25Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMD16N25Z transistor as follows.

TMD16N25Z Transistor Specification

Transistor Code		TMD16N25Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	93.9W
Drain-Source Capacitance		152pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		51nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		19nC

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