TMAN23N50 MOSFET Transistor

The TMAN23N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMAN23N50 transistor as follows.

TMAN23N50 Transistor Specification

Transistor Code		TMAN23N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.22Ohm
Power Dissipation (Maximum)	PD	347W
Drain-Source Capacitance		357pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		64nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		66nC

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