TMAN20N60A MOSFET Transistor

The TMAN20N60A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMAN20N60A transistor as follows.

TMAN20N60A Transistor Specification

Transistor Code		TMAN20N60A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.33Ohm
Power Dissipation (Maximum)	PD	347W
Drain-Source Capacitance		346pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		87nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		70nC

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