TMAN20N60 MOSFET Transistor

The TMAN20N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMAN20N60 transistor as follows.

TMAN20N60 Transistor Specification

Transistor Code		TMAN20N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.33Ohm
Power Dissipation (Maximum)	PD	347W
Drain-Source Capacitance		146pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		63nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		76nC

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