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TMAN20N50 MOSFET Transistor

The TMAN20N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMAN20N50 transistor as follows.

Circuit diagram symbol of the TMAN20N50 transistor

TMAN20N50 Transistor Specification

Transistor Code TMAN20N50
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3PN
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 312W
Drain-Source Capacitance 296pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 72nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 54nC

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