TMAN11N90AZ MOSFET Transistor

The TMAN11N90AZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMAN11N90AZ transistor as follows.

TMAN11N90AZ Transistor Specification

Transistor Code		TMAN11N90AZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.9Ohm
Power Dissipation (Maximum)	PD	416W
Drain-Source Capacitance		297pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		89nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		84nC

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