TMAN10N80 MOSFET Transistor

The TMAN10N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TMAN10N80 transistor as follows.

TMAN10N80 Transistor Specification

Transistor Code		TMAN10N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3PN
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.05Ohm
Power Dissipation (Maximum)	PD	312W
Drain-Source Capacitance		214pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		62nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		53nC

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