TK9A90E MOSFET Transistor

The TK9A90E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK9A90E transistor as follows.

TK9A90E Transistor Specification

Transistor Code		TK9A90E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220SIS
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.3Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		46nC

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