TK9A65W MOSFET Transistor

The TK9A65W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK9A65W transistor as follows.

TK9A65W Transistor Specification

Transistor Code		TK9A65W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220SIS
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		20pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		20nC

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