TK9A55DA MOSFET Transistor

The TK9A55DA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK9A55DA transistor as follows.

TK9A55DA Transistor Specification

Transistor Code		TK9A55DA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220SIS
Drain-Source Voltage (Maximum)	VDS	550V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.86Ohm
Power Dissipation (Maximum)	PD	40W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		20nC

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