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TK8Q65W MOSFET Transistor

The TK8Q65W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK8Q65W transistor as follows.

Circuit diagram symbol of the TK8Q65W transistor

TK8Q65W Transistor Specification

Transistor Code TK8Q65W
Transistor Type MOSFET
Control Channel Type N-Channel
Package IPAK
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.67Ohm
Power Dissipation (Maximum) PD 80W
Drain-Source Capacitance 16pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 20nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 16nC

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