TK8B50D MOSFET Transistor

The TK8B50D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK8B50D transistor as follows.

TK8B50D Transistor Specification

Transistor Code		TK8B50D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220NIS
Transistor SMD Code		K8B50D
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.85Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS

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