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TK8A60DA MOSFET Transistor

The TK8A60DA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK8A60DA transistor as follows.

Circuit diagram symbol of the TK8A60DA transistor

TK8A60DA Transistor Specification

Transistor Code TK8A60DA
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220SIS
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 7.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 45W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 20nC

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