TK6Q60W MOSFET Transistor

The TK6Q60W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK6Q60W transistor as follows.

TK6Q60W Transistor Specification

Transistor Code		TK6Q60W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		IPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.82Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		12pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		3.7V
Total Gate Charge		12nC

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