TK6P65W MOSFET Transistor

The TK6P65W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK6P65W transistor as follows.

TK6P65W Transistor Specification

Transistor Code		TK6P65W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.05Ohm
Power Dissipation (Maximum)	PD	60W
Drain-Source Capacitance		12pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		11nC

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