TK6A60W MOSFET Transistor

The TK6A60W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK6A60W transistor as follows.

TK6A60W Transistor Specification

Transistor Code		TK6A60W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220SIS
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.75Ohm
Power Dissipation (Maximum)	PD	30W
Drain-Source Capacitance		12pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		18nS
Gate-Threshold Voltage (Maximum)		3.7V
Total Gate Charge		12nC

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