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TK65S04N1L MOSFET Transistor

The TK65S04N1L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK65S04N1L transistor as follows.

Circuit diagram symbol of the TK65S04N1L transistor

TK65S04N1L Transistor Specification

Transistor Code TK65S04N1L
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 65A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0043Ohm
Power Dissipation (Maximum) PD 107W
Drain-Source Capacitance 1430pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 39nC

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