TK65G10N1 MOSFET Transistor

The TK65G10N1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK65G10N1 transistor as follows.

TK65G10N1 Transistor Specification

Transistor Code		TK65G10N1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0045Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		950pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		81nC

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