TK60D08J1 MOSFET Transistor

The TK60D08J1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK60D08J1 transistor as follows.

TK60D08J1 Transistor Specification

Transistor Code		TK60D08J1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Transistor SMD Code		K60D08J
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0078Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		1260pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		2.3V
Total Gate Charge		86nC

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