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TK5Q65W MOSFET Transistor

The TK5Q65W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK5Q65W transistor as follows.

Circuit diagram symbol of the TK5Q65W transistor

TK5Q65W Transistor Specification

Transistor Code TK5Q65W
Transistor Type MOSFET
Control Channel Type N-Channel
Package IPAK
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.22Ohm
Power Dissipation (Maximum) PD 60W
Drain-Source Capacitance 10pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 10.5nC

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