TK56A12N1 MOSFET Transistor

The TK56A12N1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK56A12N1 transistor as follows.

TK56A12N1 Transistor Specification

Transistor Code		TK56A12N1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220SIS
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		650pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		69nC

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