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TK4Q60DA MOSFET Transistor

The TK4Q60DA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK4Q60DA transistor as follows.

Circuit diagram symbol of the TK4Q60DA transistor

TK4Q60DA Transistor Specification

Transistor Code TK4Q60DA
Transistor Type MOSFET
Control Channel Type N-Channel
Package PW-MOLD2
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.2Ohm
Power Dissipation (Maximum) PD 80W
Drain-Source Capacitance 55pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 4.4V
Total Gate Charge 11nC

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