TK4A60DB MOSFET Transistor

The TK4A60DB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK4A60DB transistor as follows.

TK4A60DB Transistor Specification

Transistor Code		TK4A60DB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220SIS
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.2Ohm
Power Dissipation (Maximum)	PD	35W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4.4V

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