TK35N65W MOSFET Transistor

The TK35N65W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK35N65W transistor as follows.

TK35N65W Transistor Specification

Transistor Code		TK35N65W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	270W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		30nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		100nC

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