TK33S10N1Z MOSFET Transistor

The TK33S10N1Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK33S10N1Z transistor as follows.

TK33S10N1Z Transistor Specification

Transistor Code		TK33S10N1Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0097Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		1070pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8.4nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		28nC

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