TK32E12N1 MOSFET Transistor

The TK32E12N1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK32E12N1 transistor as follows.

TK32E12N1 Transistor Specification

Transistor Code		TK32E12N1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0138Ohm
Power Dissipation (Maximum)	PD	98W
Drain-Source Capacitance		330pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		34nC

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