TK31E60X MOSFET Transistor

The TK31E60X is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK31E60X transistor as follows.

TK31E60X Transistor Specification

Transistor Code		TK31E60X
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	30.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.088Ohm
Power Dissipation (Maximum)	PD	230W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		65nC

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