TK17V65W MOSFET Transistor

The TK17V65W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK17V65W transistor as follows.

TK17V65W Transistor Specification

Transistor Code		TK17V65W
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN8X8
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	17.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.21Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		45nC

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