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TK17A80W MOSFET Transistor

The TK17A80W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK17A80W transistor as follows.

Circuit diagram symbol of the TK17A80W transistor

TK17A80W Transistor Specification

Transistor Code TK17A80W
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220SIS
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 17A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.29Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 42pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 24nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 32nC

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