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TK16C60W MOSFET Transistor

The TK16C60W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK16C60W transistor as follows.

Circuit diagram symbol of the TK16C60W transistor

TK16C60W Transistor Specification

Transistor Code TK16C60W
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2PAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 15.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 130W
Drain-Source Capacitance 35pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS
Gate-Threshold Voltage (Maximum) 3.7V
Total Gate Charge 38nC

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