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TK12A60W MOSFET Transistor

The TK12A60W is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK12A60W transistor as follows.

Circuit diagram symbol of the TK12A60W transistor

TK12A60W Transistor Specification

Transistor Code TK12A60W
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220SIS
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 11.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 35W
Drain-Source Capacitance 23pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 23nS
Gate-Threshold Voltage (Maximum) 3.7V
Total Gate Charge 25nC

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