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TK12A60D MOSFET Transistor

The TK12A60D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK12A60D transistor as follows.

Circuit diagram symbol of the TK12A60D transistor

TK12A60D Transistor Specification

Transistor Code TK12A60D
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220SIS
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.55Ohm
Power Dissipation (Maximum) PD 45W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 38nC

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