TK11S10N1L MOSFET Transistor

The TK11S10N1L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK11S10N1L transistor as follows.

TK11S10N1L Transistor Specification

Transistor Code		TK11S10N1L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.028Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		370pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		15nC

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