TK100S04N1L MOSFET Transistor

The TK100S04N1L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TK100S04N1L transistor as follows.

TK100S04N1L Transistor Specification

Transistor Code		TK100S04N1L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0023Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		3000pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		76nC

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