TJ60S06M3L MOSFET Transistor

The TJ60S06M3L is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the TJ60S06M3L transistor as follows.

TJ60S06M3L Transistor Specification

Transistor Code		TJ60S06M3L
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0112Ohm
Power Dissipation (Maximum)	PD	100W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		156nC

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